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MG40P12E1
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Mfr. Part # | MG40P12E1 |
| Silicocean Part # | C2942705 |
| Package | E1 |
| Description | 227W 40A 1.2kV E1 IGBT Transistors / Modules ROHS |
| Shipping from | Hong Kong |
| Incoterms | EXW |
| Lead Time | - |
Technical Specifications
| Category | Thyristors/IGBT Transistors / Modules |
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | E1 |
| Pd - Power Dissipation | 227W |
| Td(off) | 151ns |
| Td(on) | 31ns |
| Current - Collector(Ic) | 40A |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV |
| Input Capacitance(Cies) | 2.25nF@25V,0V |
| Voltage - Forward(Vf) | 2V@40A |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | [email protected] |
| Gate Charge(Qg) | 0.35uC |
| Operating Temperature | -40℃~+150℃ |
| Vce Saturation(VCE(sat)) | 2.05V@40A,15V |
| Switching Energy(Eoff) | 2.64mJ |
| Turn-On Energy (Eon) | 3.97mJ |
Compliance & Export Information
| RoHS | yes |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Additional Information
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 8 |
| Sales Unit | Piece |
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