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IGW50N65H5

infineon-technologies-igw50n65h5_silicocean – IGW50N65H5 by Infineon Technologies

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Manufacturer Infineon Technologies
Mfr. Part # IGW50N65H5
SilicOcean Part Number Si536108
Package TO-247-3
Description 305W 650V TO-247-3 Single IGBTs RoHS
Shipping from Hong Kong
Incoterms EXW
Lead Time -

Technical Specifications

Collector-Emitter Breakdown Voltage (Vces) 650V
EDA Models EasyEDA Model
Turn-On Energy (Eon) 520uJ
Switching Energy(Eoff) 180uJ
Output Capacitance(Coes) 50pF
Gate Charge(Qg) 120nC@15V
Gate-Emitter Threshold Voltage (Vge(th)@Ic) [email protected]
Input Capacitance(Cies) 3nF
Reverse Transfer Capacitance (Cres) 11pF
Manufacturer Infineon Technologies
Operating Temperature -40℃~+175℃
Td(on) 21ns
Td(off) 180ns
Pd - Power Dissipation 305W
Category Single IGBTs
Key Attributes High speed 5 IGBT in TRENCHSTOP 5 technology, 650V IGBT high speed switching series fifth generation
Mfr. Part # IGW50N65H5

Compliance & Export Information

RoHS yes
ECCN EAR99
CNHTS 8541600000
USHTS 8541600080
TARIC 8541600000
CAHTS 8541600010
BRHTS 85416010
INHTS 85416000
MXHTS 8541.60.01

Additional Information

Minimum 1
Multiple 1
Standard Packaging 30
Sales Unit Piece

IGW50N65H5

SKU: infineon-technologies-igw50n65h5_silicocean

Pricing & Procurement Details

Price on Request

Available to Order

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