GSTIN: 23AFSFS8111D1Z0

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HYG013N03LS1C2

huayi-hyg013n03ls1c2_silicocean – HYG013N03LS1C2 by HUAYI

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Manufacturer HUAYIAsian Brands
Mfr. Part # HYG013N03LS1C2
SilicOcean Part Number Si2763405
Package PDFN5x6-8
Description N-Channel 30V 150A 65W Surface Mount PDFN5x6-8
Shipping from Hong Kong
Incoterms EXW
Lead Time -

Technical Specifications

Reverse Transfer Capacitance (Crss@Vds) 9.2pF
EDA Models EasyEDA Model
Gate Threshold Voltage (Vgs(th)) 3V
Current - Continuous Drain(Id) 150A
Gate Charge(Qg) 44.7nC@10V
Pd - Power Dissipation 65W
Output Capacitance(Coss) 773pF
Number 1 N-channel
RDS(on) 2.8mΩ@4.5V
Manufacturer HUAYI
Ciss-Input Capacitance 3.011nF
Type N-Channel
Operating Temperature - -55℃~+175℃
Drain to Source Voltage 30V
Category Single FETs, MOSFETs
Key Attributes MOSFET N-CH 30V 150A PDFN5x6-8
Mfr. Part # HYG013N03LS1C2

Compliance & Export Information

RoHS yes
CNHTS 8541290000
USHTS 8541290095
TARIC 8541290000
CAHTS 8541290000
BRHTS 85412910
INHTS 85412900
MXHTS 8541.29.99

Additional Information

Minimum 5
Multiple 5
Standard Packaging 5000
Sales Unit Piece

HYG013N03LS1C2

SKU: huayi-hyg013n03ls1c2_silicocean

Pricing & Procurement Details

Price on Request

Available to Order

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